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愛普科技正式宣告成功實現VHMTM,DRAM與邏輯晶片之真3D異質整合


愛普科技宣布已成功實現異質整合高頻寬記憶體(VHMTM),即DRAM與邏輯晶片的真3D堆疊異質整合。

愛普科技股份有限公司(TWSE: 6531,下稱 “愛普科技”)宣布已成功實現異質整合高頻寬記憶體(VHMTM),即DRAM與邏輯晶片的真3D堆疊異質整合。此3D整合晶片提供了相對於高頻寬記憶體(HBM)十倍以上的高速頻寬;其搭載超過4GB的記憶體容量,更是7奈米製程邏輯晶片內存SRAM之最大容量的五到十倍。



愛普科技提供VHMTM,包含客製化DRAM設計及DRAM與邏輯晶片整合介面之VHMTM LInK IP,力晶積成電子製造股份有限公司(ESB: 6770,下稱“力積電”)則是提供客製化DRAM晶圓代工製造服務,並由台灣積體電路股份有限公司(TWSE: 2330,下稱 “台積電”)提供邏輯製程晶圓代工及3D堆疊製造服務。而此3D堆疊晶片客戶為鯨鏈科技股份有限公司,是一家專注科技創新的無晶圓廠半導體及系統方案供應商。



半導體產業的封裝技術已從傳統的2D封裝演進到2.5D,再到真正的3D封裝技術。2.5D封裝(過去常被泛稱為”3D”)是將多片晶片封裝於同一塊矽中介板(Silicon Interposer)上,而真正的3D封裝技術則是以垂直的連接方式將多片晶片直接立體地互相堆疊。2.5D封裝時的記憶體頻寬受限於矽中介板上可載的橫向連接之數量;而3D封裝因為採用垂直連接的方式,其連接數量幾乎不會受限。得益於此,相較於2.5D封裝,邏輯晶片與DRAM的3D整合將可在顯著降低傳輸功耗的同時,大幅提升記憶體的頻寬。



力積電指出:「邏輯晶片與DRAM的3D整合是力積電在AI記憶體策略上的最新成果,這項3D技術將可為DRAM的頻寬創造前所未見的可能性,對於AI、網通及圖像處理等特別需要大量頻寬的應用,將有極大的幫助。」



「愛普科技非常高興能與台積電及力積電等業界領導大廠,一同在邏輯晶片與DRAM的3D整合上密切合作,幫助客戶達到前所未有的產品效能。」愛普科技的劉景宏副總表示。劉副總同時擔任愛普科技AI事業部主管,亦進一步補充:「愛普科技的使命即是提供優良的記憶體解決方案,讓客戶的產品更有競爭力,創造更多商機。」



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