愛普,S-SiCapTM,高電容值密度,高自諧振頻率,薄型化厚度需求

S-SiCap^TM

最高的電容密度，適用高效能運算應用

產品概述

S-SiCap^TM

Stack Silicon Capacitor

愛普科技的S-SiCap^TM(Stack Silicon Capacitor)矽電容系列產品使用DRAM堆疊式電容技術開發而成，相比深溝式電容技術(Deep Trench Capacitor)所開發的電容產品, S-SiCap^TM的單位面積電容密度更高、體積更小更薄，且具有極佳的溫度與高頻操作下優異電壓穩定性。

主要特性

Key Features

S-SiCap^TM

SELECT

S-SiCap^TM

高電容值密度

可達2.5uF/mm²

高自諧振頻率

低等效串聯電感及等效串聯電阻

薄型化厚度需求

厚度<100um

客製化尺寸

為您客製合適性能的產品

其他優勢

點選線上產品諮詢清單，填寫其他產品需求，由專業業務人員與您接洽

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愛普,S-SiCapTM,高電容值密度,高自諧振頻率,薄型化厚度需求

S-SiCapTM

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S-SiCap^TM